document number: 81955 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 1 optocoupler, phototransisto r output, low input current, with base connection vo215at, vo216at, VO217AT vishay semiconductors description the vo215at, vo216at, VO217AT are optically coupled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolatio n between input and output. the high ctr at low input current is designed for low power consumption requirements such as cmos microprocessor interfaces. features ? high current transfer ratio ? isolation test voltage, 4000 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 (vde 0884) available with option 1 note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. i179002 1 2 3 4 a k n c n c 8 7 6 5 n c b c e order information part remarks vo215at ctr > 20 %, soic-8 vo216at ctr > 50 %, soic-8 VO217AT ctr > 100 %, soic-8 absolute maximum ratings parameter test condition symbol value unit input peak reverse voltage v r 6v peak forward current 1 s, 300 pps i fm 1a forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 c 1.2 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7v collector base breakdown voltage bv cbo 70 v i cmax. dc i cmax. dc 50 ma i cmax. t < 1 ms i cmax. 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2mw/c coupler isolation test voltage 1 s v iso 4000 v rms total package dissipation led and detector p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c soldering time at 260 c 10 s
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81955 2 rev. 1.0, 02-dec-08 vo215at, vo216at, VO217AT vishay semiconductors optocoupler, phototransistor output, low input current, with base connection note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 1 ma v f 11.5v reverse current v r = 6 v i r 0.1 100 a capacitance v r = 0 v c o 13 pf output collector emitter breakdown voltage i c = 100 a bv ceo 30 v emitter collector breakdown voltage i c = 10 a bv eco 7v collector base breakdown voltage i c = 100 a bv cbo 100 v collector base current i cbo 1na emitter base current i ebo 1na dark current collector emitter v ce = 10 v, i f = 0 a i ceo 550na collector emitter capacitance v ce = 0 c ce 10 pf saturation voltage, collector emitter i f =1 ma, i c = 0.1 ma v cesat 0.4 v coupler capacitance (input to output) c io 0.5 pf current transfer ratio parameter test condition part symbol min. typ. max. unit dc current transfer ratio i f = 1 ma, v ce = 5 v vo215at ctr dc 20 50 % vo216at ctr dc 50 80 % VO217AT ctr dc 100 130 %
document number: 81955 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 3 vo215at, vo216at, VO217AT optocoupler, phototransistor output, low input current, with base connection vishay semiconductors fig. 1 - switching test circuit fig. 2 - test circuit for common mode transient immunity switching characteristics parameter test condition symbol min. typ. max. unit turn-on time i c = 2 ma, r l = 100 , v cc = 10 v t on 3s turn-off time i c = 2 ma, r l = 100 , v cc = 10 v t off 3s rise time i c = 2 ma, r l = 100 , v cc = 10 v t r 3s fall time i c = 2 ma, r l = 100 , v cc = 10 v t f 2s common mode transient immunity parameter test condition symbol min. typ. max. unit common mode transient immunity at logic high v cm = 1000 v p-p , r l = 1 k , i f = 0 ma |c mh |5000v/s common mode transient immunity at logic low v cm = 1000 v p-p , r l = 1 k , i f = 10 ma |c ml |5000v/s iil215at_17 v cc = 5 v inp u t v out r l t fall 10 % 50 % 90 % t off t on t rise o u tp u t inp u t 10 % 50 % 90 % v 0 0 r f v b = 4.5 v 2, 3, 4 1 b a 7 6 5 r l 1 k v o 5 v dc 0.1 f v cm inp u t from h v p u lse so u rce + - 21627 dt dt d v = 63 % of v cm d v = 63 % of v cm common mode v oltage v cm 2.0 v 2.0 v v o v o cm h cm l 0. 8 v 0. 8 v time 21626
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81955 4 rev. 1.0, 02-dec-08 vo215at, vo216at, VO217AT vishay semiconductors optocoupler, phototransistor output, low input current, with base connection note as per iec 60747-5-2, 7.4.3.8.1, this optocoupler is suitable for ?safe electrical insu lation? only within the safety ratings. compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 3 - forward voltage vs. forward current fig. 4 - normalized non-saturated and saturated ctr ce vs. led current safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/100/21 polution degree 2 comparative tracking index cti 175 399 isolation test voltage 1 s v iso 4000 v rms peak transient overvoltage v iotm 6000 v peak insulation voltage v iorm 560 v resistance (input to output) r io 100 g safety rating - power output p so 350 mw safety rating - input current i si 150 ma safety rating - temperature t si 165 c external creepage distance 4 mm external clearance distance 4 mm internal creepage distance 3.3 mm insulation thickness 0.2 mm iil215at_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 100 c t a = 25 c iil215at_02 0.1 1 10 100 0.0 0.5 1.0 1.5 n ctr ce - n ormalized ctr ce v ce =5 v n ormalized to: v ce = 10 v i f = 10 ma v ce = 0.4 v i f - led c u rrent (ma)
document number: 81955 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 5 vo215at, vo216at, VO217AT optocoupler, phototransistor output, low input current, with base connection vishay semiconductors fig. 5 - collector emitte r current vs. led current fig. 6 - normalized collector ba se photocurrent vs. led current fig. 7 - collector base p hotocurrent vs. led current fig. 8 - collector emitter leakage current vs.temperature fig. 9 - normalized saturated h fe vs. base current and temperature fig. 10 - normalized non-saturated and saturated ctr ce vs. led current iil215at_03 0.1 1 10 100 0 50 100 150 v ce = 0.4 v v ce = 5 v i f - led c u rrent (ma) i ce - collector emitter c u rrent (ma) iil215at_04 0.1 1 10 100 0.1 1 10 100 n l c b - n ormalized i c b i f - led c u rrent (ma) n ormalized to: v c b = 9.3 v i f = 1.0 ma iil215at_05 0.1 1 10 100 0.1 1 10 100 1000 i c b - collector base c u rrent ( a) v c b = 9.3 v i f - led c u rrent (ma) iil215at_06 100 8 0 60 40 20 0 - 20 t a - am b ient temperat u re (c) i ceo - collector emitter (na) typical v ce = 10 v 10 5 10 4 10 3 10 2 10 1 10 0 10 - 1 10 - 2 iil215at_07 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 c 50 c 70 c i b - base c u rrent ( a) n h fe(sat) - n ormalized sat u rated h fe n ormalized to: i b = 20 a v ce = 10 v v ce = 0.4 v 1 iil215at_0 8 10 100 0.0 0.5 1.0 1.5 2.0 v ce = 0.4 v v ce = 5 v i f - led c u rrent (ma) n ctr ce - n ormalzed ctr ce n ormalized to: v ce = 5 v i f = 1 ma 1 0.1
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81955 6 rev. 1.0, 02-dec-08 vo215at, vo216at, VO217AT vishay semiconductors optocoupler, phototransistor output, low input current, with base connection fig. 11 - normalized non-saturated and saturated collector emitter current vs. led current fig. 12 - normalized collector ba se photocurrent vs. led current fig. 13 - collector base ph otocurrent vs. led current fig. 14 - high to low propagation delay vs. led current and load resistor fig. 15 - low to high propagation delay vs. led current and load resistor fig. 16 - normalized non-saturated h fe vs. base current and temperature iil215at_09 10 100 0.01 0.1 1 10 100 v ce = 5 v v ce = 0.4 v i f - led c u rrent (ma) n i ce - n ormalized i ce n ormalized to: v ce = 5 v i f = 1 ma 0.1 1 iil215at_10 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i f - led c u rrent (ma) n i c b - n ormalized i c b n ormalized to: v ce =5 v i f =1ma iil215at_11 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 i f - led c u rrent (ma) i c b - collector base photoc u rrent ( a) v c b = 9.3 v iil215at_12 10 15 20 0 5 10 15 20 10 k i f - led c u rrent (ma) t phl - high lo w propagation delay ( s) 2 k 4.7 k v cc = 5 v v th = 1.5 v 0 5 8 0 iil215at_13 10 15 20 0 20 40 60 10 k 4.7 k 2 k t plh - lo w high propagation delay ( s) v cc = 5 v , v th = 1.5 v 0 5 iil215at_14 1000 0.4 0.6 0. 8 1.0 1.2 i b - base c u rrent ( a) n h fe - n ormalized h fe - 20 c 25 c 50 c 70 c n ormalized to: i b = 20 a v ce = 10 v 10 100 1
document number: 81955 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 7 vo215at, vo216at, VO217AT optocoupler, phototransistor output, low input current, with base connection vishay semiconductors fig. 17 - typical switch ing characteristics vs. base resistance (saturated operation) fig. 18 - typical switching times vs. load resistance package dimensions in inches (millimeters) iil215at_15 100 50 10 5 1.0 inp u t: = 10 ma p u lse w idth = 100 ms d u ty cycle = 50 % base emitter resistance, r be ( w ) t o ff t o n s w itching time ( s) 10k 50k 100k 500k 1m i f iil215at_16 1000 500 100 50 10 5 1 0.1 0.5 1 10 50 100 inp u t: i f = 10 ma p u lse w ith = 100 ms d u ty cycle = 50 % t off t o n load resistance r l (k ) s w itching time ( s) 5 i17 8 003 40 7 pin one id 5 max. iso method a 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.0015 (0.04) max. 0.00 8 (0.20) 0.120 0.005 (3.05 0.13) c l r 0.010 (0.25) max. 0.021 (0.53) 0.154 0.005 (3.91 0.13) 0.015 0.002 (0.3 8 0.05) 0.192 0.005 (4. 88 0.13) 0.020 0.004 (0.51 0.10) 2 places 0.05 8 0.005 (1.49 0.13) 0.125 0.005 (3.1 8 0.13)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81955 8 rev. 1.0, 02-dec-08 vo215at, vo216at, VO217AT vishay semiconductors optocoupler, phototransistor output, low input current, with base connection ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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